OptiMOS-T2 Power-Transistor
Description
www.
DataSheet.
co.
kr
IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max (SMD version) ID 60 7.
9 45 V mΩ A
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N06L08 4N06L08 4N06L08
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22.
5A T C=25°C Value 45 45 180 97 45 ±16 71 -55 .
.
.
+175 55/175/56 mJ A V W °C Unit A
Rev.
1.
0
page 1
2009-03-24
Datasheet pdf - http://www.
DataSheet4U.
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www.
DataSheet.
co.
kr
IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08
Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=35µA V DS=60V, V GS=0V V DS=60V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS=0V V GS=4.
5V, I D=22.
5A V GS=4.
5V, I D=22.
5A, SMD version V GS=10 V, I D=45A V GS=10 V, I D=45A, SMD version 60 1.
2 1.
7 0.
01 5 9.
7 9.
4 7.
0 6.
7 2.
2 1 100 100 14 13.
7 8.
2 7.
9 nA mΩ µA V 2.
1 62 62 40 K/W Values typ.
max.
Unit
Rev.
1.
0
page...
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