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FMMDT5451

Jiangsu Changjiang Electronics

TRANSISTOR

FMMDT5451
FMMDT5451

PDF File FMMDT5451 PDF File

Description
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kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR WBFBP-06C (2×2×0.
5) unit: mm DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP z Ultra-Small Surface Mount Package z 1 APPLICATION Ideal for Medium Power Amplification and Switching For portable equipment:(i.
e.
Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.
) MARKING: KNM KNM E1,B1,C1=NPN 5551 Section E2,B2,C2=PNP 5401 Section 5551 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Value 180 160 6 0.
2 0.
15 625 150 -55-150 Units V V V A W K/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature range ℃ ℃ 5401 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature range Parameter Value -160 -150 -5 -0.
2 Units V V V A 0.
15 625 150 -55-150 W K/W ℃ ℃ Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 5551 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE（1） hFE（2） hFE（3） Test unless otherwise MIN 180 160 6 specified） TYP MAX UNIT V V V 50 50 conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Ic=100µA,IE=0 Ic=1mA, IB=0 IE= 10µA, IC=0 VCB= 120V VEB= 4V, IC=0 VCE= 5 V, VCE= 5 V, VCE= 5 V, IC= 1 mA IC = 10 mA IC= 50 mA IE=0 nA nA 80 80 30 0.
15 0.
2 1 1 100 300 6 8 V V MHz pF dB 250 DC current gain Collector-emitter saturation voltage VCEsat VBEsat IC=...


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