TRANSISTOR
Description
www.
DataSheet.
co.
kr
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
WBFBP-06C Power management Dual-transistors
FUMF21N
TRANSISTOR
WBFBP-06C
(2×2×0.
5) unit: mm
DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.
z Power switching circuit in a single package.
z Mounting cost and area can be cut in half.
APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.
e.
Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.
)
1
MARKING:F21
F21
TR1 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -15 -12 -6 -0.
5 Units V V V A
0.
15
150 -55-150
W
℃ ℃
DTR2 Absolute maximum ratings(Ta=25℃) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 50 100 150 150 -55~150 Unit V V mA mW ℃ ℃
Datasheet pdf - http://www.
DataSheet4U.
net/
www.
DataSheet.
co.
kr
TR1
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test
unless
conditions
otherwise
MIN -15 -12 -6
specified)
TYP MAX UNIT V V V -0.
1 -0.
1
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB= -15 V, IE=0 VEB=- 6V, IC=0 VCE=-2V, IC=-10mA IC=-200mA,IB=-10mA VCE=-2V,IC=-10mA, f=100MHz VCB=-10V,IE=0,f=1MHz
µA µA
V MHz pF
270
680 -0.
25 260 6.
5
fT
Cob
DTR2
Electrical characteristics (Ta=25℃)
Parameter
Input voltage Output voltage Input current Output current DC current gain Input resistan...
Similar Datasheet
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