SILICON EPITAXIAL PLANAR DIODE
Description
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small package : TFSV. Low forward voltage. Fast reverse recovery time. Small total capacitance.
C
KDS166F
SILICON EPITAXIAL PLANAR DIODE
B B1
MAXIMUM RATING (Ta=25 CHARACTERISTIC
) SYMBOL VRM VR IFM IO IFSM PD * Tj Tstg 1.5 RATING 85 80 300 100 2 100 150 -55 150 UNIT V
H
Maxim...
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