CAL-DIODE
Description
SKCD 61 C 120 I3
Absolute Maximum Ratings Symbol
VRRM IF(AV) IFSM Tjmax
Conditions
Tj = 25 °C, IR = 0.
2 mA Ts = 80 °C, Tj = 150 °C 10 ms sin 180° Tj = 25 °C Tj = 150 °C
Values
1200 60 900 720 150
Unit
V A A A °C
CAL-DIODE
IF = 75 A VRRM = 1200 V Size: 7,8 mm x 7,8 mm
SKCD 61 C 120 I3
Electrical Characteristics Symbol
i2t IR VF V(TO) rT
Conditions
Tj = 150 °C, 10 ms, sin 180° Tj = 25 °C, VRRM = 1200 V Tj = 125 °C, VRRM = 1200 V Tj = 25 °C, IF = 70 A Tj = 125 °C, IF = 70 A Tj = 125 °C Tj = 125 °C
min.
typ.
max.
2592 0.
20 6.
00
Unit
A2s mA mA V V V mΩ
2.
00 1.
79 1.
18 8.
1
2.
50 2.
30
Features
• low forward voltage drop combined with a low temperature dependence • easy paralleling due to a small forward voltage spread • very soft recovery behavior • small switching losses • high ruggedness • compatible to thick wire bonding • compatible to all standard solder processes
Dynamic Characteristics Symbol
trr trr Qrr Qrr Irrm Irrm
Conditions
Tj = 25 °C, 75 A, 600 V, 800 A/µs Tj = 125 °C, 75 A, 600 V, 800 A/µs Tj = 25 °C, 75 A, 600 V, 800 A/µs Tj = 125 °C, 75 A, 600 V, 800 A/µs Tj = 25 °C, 75 A, 600 V, 800 A/µs Tj = 125 °C, 75 A, 600 V, 800 A/µs
min.
typ.
max.
Unit
µs ns
3 11 45
µC µC A A
Typical Applications*
• freewheeling diode for IGBT • particularly suitable for frequencies > 8 kHz
Thermal Characteristics Symbol
Tj Tstg Tsolder Tsolder Rth(j-s) 10 min.
5 min.
sold.
on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.
54
Conditions
min.
-40 -40
typ.
max.
150 150 250 320
Unit
°C °C °C °C K/W
Mechanical Characteristics Symbol
Raster size Area total Anode Cathode Wire bond Package Chips / Package
Conditions
Values
7.
8 x 7.
8 60.
84 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm wafer frame 156 (5" Wafer)
Unit
mm2 mm2
pcs
SKCD © by SEMIKRON www.
DataSheet4U.
net Rev.
0 – 18.
02.
2010 1
SKCD 61 C 120 I3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specification...
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