N-Channel FREDFET
Description
APT80F60J
600V, 84A, 0.
055Ω Max, trr ≤ 370ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft www.
DataSheet4U.
net recovery, and high recovery dv/dt capability.
Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss.
The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
"UL Recognized"
IS OTO P ®
file # E145592
APT80F60J Single die FREDFET
G
D
S
FEATURES
• Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 84 52 447 ±30 3352 60
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.
) Package Weight -55 2500 1.
03 29.
2 10 1.
1 0.
15 150 Min Typ Max 961 0.
13 Unit W °C/W °C V
Rev C 4-2011 050-8175
oz g in·lbf N·m
Torque
Terminals and Mounting Scr...
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