Power Transistors
Description
Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
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Silicon PNP epitaxial planar type darlington
4.
2±0.
2
Unit: mm
0.
7±0.
1
10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 2.
7±0.
2
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
• High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.
7±0.
3
7.
5±0.
2
■ Features
φ 3.
1±0.
1
Solder Dip (4.
0)
14.
0±0.
5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −2 −4 35 2 150 −55 to +150 °C °C V A A W V Unit V
1.
4±0.
1
1.
3±0.
2 0.
5+0.
2 –0.
1
0.
8±0.
1
2.
54±0.
3 5.
08±0.
5
Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = −4 V, IC = −2 A VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VCE = −30 V, IB = 0 VCE = −40 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −2 A IC = −2 A, IB = −8 mA VCE = −10 V, IC = − 0.
5 A, f = 1 MHz IC = −2 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V 20 0.
4 1.
5 0.
5 1 000 1 000 Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 Typ
E Max Unit V −2.
8 −1 −1 −2 −2 −2 10 000 −2.
5 V MHz µs µs µs mA mA
V mA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) 1.
Measuring methods are...
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