Power Transistors
Description
Power Transistors
2SB0934 (2SB934)
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Silicon PNP epitaxial planar type
For Power switching Complementary to 2SD1257 ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0±0.
3 1.
5±0.
1
Unit: mm
8.
5±0.
2 6.
0±0.
2 3.
4±0.
3 1.
0±0.
1
4.
4±0.
5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −7 −15 40 1.
3 150 −55 to +150 °C °C Unit V V V A A W
(6.
5)
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE(sat) VCE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −3 A IC = −5 A, IB = − 0.
25 A IC = −5 A, IB = − 0.
25 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz IC = −3 A, IB1 = − 0.
3 A, IB2 = 0.
3 A VCC = −50 V 30 0.
5 1.
5 0.
1 45 90 260 −1.
5 − 0.
5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260
Note) The part number in the parenthesis shows conventional part number.
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