IGBT MODULE
Description
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Fig.
1- Output Characteristics (Typical)
100
TC=25 ℃ VGE =20V 12V 15V
16
Fig.
2- Collector to Emitter On Voltage vs.
Gate to Emitter Voltage (Typical)
TC=25 ℃ IC=20A 100A
Collector to Emitter Voltage V CE (V)
14
80
10V
50A
12 10 8 6 4 2 0
Collector Current I C (A)
60
9V
40
20
8V 7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
Gate to Emitter Voltage V GE (V)
Fig.
3- Collector to Emitter On Voltage vs.
Gate to Emitter Voltage (Typical)
16
Fig.
4- Gate Charge vs.
Collector to Emitter Voltage (Typical)
400 350 16
TC=125 ℃ I C=20A 100A
Collector to Emitter Voltage V CE (V)
14
RL=5 Ω TC=25 ℃
14
Collector to Emitter Voltage V CE (V)
50A
12 10 8 6 4 2 0
Gate to Emitter Voltage V GE (V)
300 250 200
12 10 8
VCE =300V
150 6
200V
100 50 0
100V
4 2 0
0
4
8
12
16
20
0
50
100
150
200
Gate to Emitter Voltage V GE (V)
Total Gate Charge Qg (nC)
Fig.
5- Capacitance vs.
Collector to Emitter Voltage (Typical)
20000 10000 5000 1
Fig.
6- Collector Current vs.
Switching Time (Typical)
0.
9 0.
8
Cies Coes Cres
VGE =0V f=1MH Z TC=25 ℃
VCC=300V RG=15 Ω VGE = ± 15V TC=25 ℃
Switching Time t ( μ s)
Capacitance C (pF)
2000 1000 500 200 100 50 20
0.
7 0.
6 0.
5 0.
4 0.
3 0.
2 0.
1
toff
ton tf tr
0 20 40 60 80 100
0.
2
0.
5
1
2
5
10
20
50
100
200
0
Collector to Emitter Voltage V CE (V)
Collector Current IC (A)
Fig.
7- Series Gate Impedance vs.
Switching Time (Typical)
5
Fig.
8- Forward Characteristics of Free Wheeling Diode
(Typical)
100
2
VCC=300V IC=50A VG= ± 15V TC=25 ℃
TC=25 ℃
90 80
TC=125 ℃
Switching Time t ( μ s)
Forward Current I F (A)
toff ton tr
70 60 50 40 30 20
1
0.
5
tf
0.
2
0.
1
10
0.
05 2 5 10 20 50 100 200 500
0
0
1
2
3
4
Series Gate Impedance R G ( Ω )
Forward Voltage V F (V)
Fig.
9- Reverse Recovery Characteristics (Typical)
500
Fig.
10- Reverse Bias Safe Operating Area (Typical)
500 200 100
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
IF...
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