POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
2SA1166
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency
amplifier output sta...
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