POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.8V(Max.)@ IC= -7A ·Good Linearity of hFE ·Large Collector Current ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio f...
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