POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
2SA1217
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2877 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed switching applications. ·Suitable for...
Inchange Semiconductor
2SA1217 PDF File
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