POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
2SA1279
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Col...
Inchange Semiconductor
2SA1279 PDF File
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