POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
2SA1389
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min) ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters
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Inchange Semiconductor
2SA1389 PDF File
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