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2SA1513

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and high power switching appli...

Inchange Semiconductor

2SA1513 PDF File

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