PD - 96156A
IRG7PH30K10PbF
INSULATED GATE BIPOLAR TRANSISTOR Features
Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package
C
VCES = 1200V I...
