Small Signal Transistor NPN - Low VCE(SAT) Transistor Chip
Description
PROCESS
Small Signal Transistor
CP382X
NPN - Low VCE(SAT) Transistor Chip
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 26 x 26 MILS 5.9 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 25,536 PRINCIPAL DEVICE TYPES CMLT38...
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