Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip
Description
PROCESS
Small Signal MOSFET
CP361R
N-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 3.94 x 3.94 MILS 3.94 x 7.08 MILS Al-Si - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 123,000 PRINCIPAL DEVICE T...