Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip
Description
PROCESS
Small Signal MOSFET
CP359R
N-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 9.1 x 9.1 MILS 3.9 MILS 2.5 MILS DIAMETER 3.9 x 3.9 MILS Al-Si - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 290,000 PRINCIPAL DEVICE TYPE...