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CP312

Power Transistor NPN - Amp/Switch Transistor Chip

Description

PROCESS Power Transistor CP312 NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,230 PRINCIPAL DEVICE TYPES CZT3120 EPITAXIAL PLANAR 70 x 70 MILS 9.0 MILS 11.4 x 18.1 MILS 13.8 x 23.6 MILS Al - 30...

Central Semiconductor

CP312 PDF File

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