600V N-Channel Enhancement Mode MOSFET
Description
PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
...
Pan Jit International
PJP2N60 PDF File
Similar Datasheet