HGTG40N60A4
Description
HGTG40N60A4
Data Sheet August 2003 File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Features
• 100kHz Operation At 390V, 40A • 200kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
55ns at TJ = 125o • Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG40N60A4 PACKAGE TO-247 BRAND 40N60A4
COLLECTOR (BACK METAL)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.
S.
PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
©2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev.
B2
www.
DataSheet.
in
HGTG40N60A4
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG40N60A4 Collector to Emitter Voltage .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
BVCES Collector Current Continuous At TC = 25oC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
IC25 ...
Similar Datasheet
