Soft Recovery Diode
Description
PD - 94308A
HFB50HC20
FRED
Features
• • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic
Ultrafast, Soft Recovery Diode
VR = 200V IF(AV) = 50A trr = 35ns
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.
The softness of the recovery eliminates the need for a snubber in most applications.
These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, Q TC = 87°C Single Pulse Forward Current, R TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
200 50 450 167 -55 to +150
Units
V A W °C
Note: Q D.
C.
= 50% rect.
wave R 1/2 sine wave, 60 Hz , P.
W.
= 8.
33 ms
CASE STYLE
(ISOLATED BASE)
CATHODE
ANODE
ANODE
TO-258AA
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irf.
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1
10/18/01
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DataSheet.
in
HFB50HC20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR VF Cathode Anode Breakdown Voltage Forward Voltage See Fig.
1 S
Min.
Typ.
Max.
Units
200 — — — — — — — — — — — — 8.
7 — 1.
34 1.
28 1.
7 1.
69 10 200 360 — µA µA pF nH V V
Test Conditions
IR = 100µA IF = 50A, TJ = -55°C T IF = 50A, TJ = 25°C T IF = 100A, TJ = 25°C T See Fig.
2
IF = 100A, TJ = 125°C T VR = VR Rated VR = VR Rated, TJ = 125°C VR = 200V Measured from anode lead to cathode lead, 6 mm ( 0.
025 in ) from package
IR
Reverse Leakage Current See Fig.
2 S Junction Capacitance, See Fig.
3 Series Inductance
— — — —
CT LS
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
t rr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2...
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