Soft Recovery Diode
Description
PD-91797
PRELIMINARY
HFA40HF120C
Ultrafast, Soft Recovery Diode
VR = 1200V VF = 4.
46V Qrr = 370nC
HEXFRED
Features
TM
(ISOLATED BASE)
• Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount
ANODE COMMON CATHODE ANODE
di(rec)M/dt = 380A/µs
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.
The softness of the recovery eliminates the need for a snubber in most applications.
These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
TM
SMD-1
Absolute Maximum Ratings (per Leg)
Parameter
VR IF @ TC = 100°C IFSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.
C.
Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
1200 15 130 63 -55 to +150
Units
V A W °C
Thermal - Mechanical Characteristics
Parameter
RθJC Junction-to-Case, Single Leg Conducting Weight
Typ.
— 2.
6
Max.
2.
0 —
Units
°C/W g
Note: D.
C.
= 50% rect.
wave 1/2 sine wave, 60 Hz , P.
W.
= 8.
33 ms
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DataSheet.
in
HFA40HF120C
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage
Min.
Typ.
Max.
Units
1200 — — — — — — — — — — — — 10 — 2.
8 — 3.
3 4.
4 2.
8 10 1.
0 15 — V V µA mA pF nH
Test Conditions
IR = 250µA IF = 7.
0A IF = 15A See Fig.
1 IF = 7.
0A, TJ = 125°C VR = VR Rated See Fig.
2 TJ = 125°C, VR = 480V VR = 200V See Fig.
3 Measured from center of bond pad to end of anode bonding wire
IRM CT LS
Max Reverse Leakage Current Junction Capacitance Series Inductance
Dynamic Recovery Characteri...
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