Advanced Power MOSFET
FEATURES
s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 30V s Lower RDS(ON) : 0.012Ω (Typ.)
SFP36N03
BVDSS = 30 V RDS(on) = 0.018Ω ID = 36 A
TO-220
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2 3
1.Gate 2. Drain 3. So...
