4Mb Ultra-Low Power Asynchronous CMOS SRAM
Description
N04L63W1A
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit Overview
The N04L63W1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.
The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.
The N04L63W1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.
The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs.
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Features
• Single Wide Power Supply Range 2.
3 to 3.
6 Volts • Very low standby current 4.
0µA at 3.
0V (Typical) • Very low operating current 2.
0mA at 3.
0V and 1µs (Typical) • Very low Page Mode operating current 0.
8mA at 3.
0V and 1µs (Typical) • Simple memory control Single Chip Enable (CE) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.
8V • Very fast output enable access time 25ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package available
Product Family
Part Number N04L63W1AB N04L63W1AT N04L63W1AB2 N04L63W1AT2 Package Type 48 - BGA 44 - TSOP II 48 - BGA Green 44 - TSOP II Green 70ns @ 2.
7V -40oC to +85oC 2.
3V - 3.
6V 55ns @ 2.
7V 4 µA 2 mA @ 1MHz Operating Temperature Power Supply (Vcc) Speed Options Standby Operating Current (ISB), Current (Icc), Typical Typical
Pin Configurations
A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 2...
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