Triacs Silicon Bidirectional Thyristors
Description
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BTB08-600BW3G, BTB08-800BW3G Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required.
Features http://onsemi.
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•ăBlocking Voltage to 800 V •ăOn‐State Current Rating of 8 Amperes RMS at 25°C •ăUniform Gate Trigger Currents in Three Quadrants •ăHigh Immunity to dV/dt - 2000 V/ms minimum at 125°C •ăMinimizes Snubber Networks for Protection •ăIndustry Standard TO‐220AB Package •ăHigh Commutating dI/dt - 4 A/ms minimum at 125°C •ăThese are Pb-Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600BW3G BTB08-800BW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.
0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.
0 90 A A Value Unit V
TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
MT2 G 4 MT1
MARKING DIAGRAM
1
2
3
TO-220AB CASE 221A STYLE 4
BTB08-xBWG AYWW
I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg
36 VDSM/VRSM +100 4.
0 20 1.
0 -ā40 to +125 -ā40 to +150
A2sec V A W W °C °C
x A Y WW G
= 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package
PIN ASSIGNMENT
1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
VDRM and VRRM for all types can be applied ...
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