N-Channel MOSFET
Description
SUP/SUB40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175 °C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60 0.
022 at VGS = 10 V 0.
025 at VGS = 4.
5 V
TO-220AB
ID (A) 40 40
FEATURES • TrenchFET® Power MOSFETs
• Maximum Junction Temperature: 175 °C Rated
TO-263
D
Available
RoHS*
COMPLIANT
DRAIN connected to TAB
GD S Top View SUP40N06-25L
G DS Top View
SUB40N06-25L
Ordering Information: TO-220AB: TO-263:
SUP40N06-25L SUP40N06-25L-E3 (Lead (Pb)-free) SUB40N06-25L SUB40N06-25L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
1 mH
EAR
Power Dissipation
TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)c
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient
PCB Mount (TO-263)c Free Air (TO-220AB)
Junction-to-Case
Notes: a.
Duty cycle ≤ 1 %.
b.
See SOA curve for voltage derating.
c.
Surface Mounted on FR4 Board, t ≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70288 S-60925-Rev.
D, 29-May-06
Symbol RthJA RthJC
G
S N-Channel MOSFET
Limit 60 ± 20 40 25 100 40 80 90c 3.
7
- 55 to 175
Limit 40 80 1.
6
Unit V
A
mJ W °C
Unit °C/W
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SUP/SUB40N06-25L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamicb
V(BR)DSS VGS(th)
IGSS IDSS ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125 °C V...
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