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RJK0395DPA

Renesas Technology

Silicon N Channel Power MOS FET


Description
Preliminary www.DataSheet4U.com Datasheet RJK0395DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1786-0210 Rev.2.10 May 12, 2010 Outline RENESAS Package code: ...



Renesas Technology

RJK0395DPA

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