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RJK0393DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1784-0220 Rev.2.20 May 21, 2010
Outline
RENESAS Package code: P...