Schottky barrier diode
Description
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Schottky barrier diode
RB521CS-30
zApplications Low current rectification zDimensions (Unit : mm) zLand size figure (Unit : mm)
zFeatures 1) Ultra Small power mold type (VMN2) 2) Low VF 3) High reliability zStructure zStructure Silicon epitaxial planer
zTaping dimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (DC) VR Average rectifierd forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg
Limits 30 100 500 150 -40 to +150
Unit V mA mA
°C °C
zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Reverse current
Symbol VF IR
Min.
-
Typ.
-
Max.
0.
35 10
Unit V µA IF=10mA VR=10V
Conditions
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1/3
2009.
12 - Rev.
B
RB521CS-30
zElectrical characteristic curves
1000 100 10 1 0.
1 0.
01 0.
001 0 100 200 300 400 500 600 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS Ta=125° C REVERSE CURRENT:IR(uA) Ta=75° C Ta=−25° C Ta=25° C 10000
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Data Sheet
100 Ta=125° C Ta=75° C CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHｚ
FORWARD CURRENT:IF(mA)
1000 100 10 1 0.
1 0.
01 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS Ta=25° C
10
Ta=-25° C
1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
300
30 Ta=25° C IF=10mA n=30pcs 25 20 15 10 AVE:2.
017uA 5 0 Ta=25° C VR=10V n=30pcs
20 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 18 17 16 15 14 13 12 11 AVE:17.
34pF Ta=25℃ f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
280
270
260
AVE:270.
2mV
REVERSE CURRENT:IR(uA)
290
250
10
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20 Ifsm 15 8.
3ms 10 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A)
10 Ifsm 8.
3ms 8.
3ms
10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc 5
5
5 AVE:3.
90A 0
0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 1 10 TIME1:t(ms) IFSM-t CHARACTERISTICS 100
1000 TRANSIENT ° C/W) T...
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