GenX3 600V IGBT w/ SiC Anti-Parallel Diode
Description
Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
600V 30A 3.
0V 47ns
High Speed PT IGBTs for 40 - 100kHz Switching
TO-263 (IXGA)
G E C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 60 30 13 150 ICM = 60 @ ≤ VCES 220 -55 .
.
.
+150 150 -55 .
.
.
+150 W °C °C °C °C °C Nm/lb.
in.
g g g G C E
C (TAB)
V V V V A A A A A
TO-220 (IXGP)
G
C
C (TAB) E
TO-247 (IXGH)
G = Gate E = Emitter Features
C = Collector TAB = Collector
1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.
13/10 2.
5 3.
0 6.
0
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ = 125°C VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values Min.
Typ.
Max.
3.
5 5.
5 25 V μA
High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100142A(06/09)
300 μA ±100 nA 2.
6 1.
8 3.
0 V V
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IXGA30N60C3C1
Symbol Test Conditions Characteristic Values
www.
DataSheet4U.
com IXGP30N60C3C1 IXGH30N60C3C1
(TJ = 25°C Unless Otherwise Specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS TO-220 TO-247 Inductive Load, TJ = 125°C IC = 20A, VGE = 15V VCE = 300V, RG = 5Ω Note 2 Inductive Load, TJ = 25°C IC = 2...
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