GigaMOS Power MOSFET
Description
Advance Technical Information
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GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK120N30T IXFX120N30T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
300V 120A 24mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 120 330 30 2.
5 20 960 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
N/lb.
g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.
13/10 20.
.
120 /4.
5.
.
27 10 6
Features
z z z z z
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C
Characteristic Values Min.
Typ.
Max.
300 2.
5 5.
0 ± 200 V V nA
z z
Easy to Mount Space Savings High Power Density
Applications
z z z
50 µA 3 mA 24 mΩ
z z z z
DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
© 2009 IXYS CORPORATION, All rights reserved
DS100132(03/09)
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IXFK120N30T IXFX120N30T
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 Resistive Switching Times VGS = 15V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 1Ω (External) VGS = 0V, VDS = ...
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