N-channel 40 V 2.3 m intermediate level Automotive TrenchMOS FET
Description
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BUK652R3-40C
N-channel 40 V 2.3 mΩ intermediate level Automotive TrenchMOS FET
Rev. 01 — 20 May 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been design...
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