NPN resistor-equipped transistor
Description
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PDTC113ET
NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
Rev.
02 — 8 April 2004 Objective data sheet
1.
Product profile
1.
1 General description
NPN resistor-equipped transistors.
PNP complement: PDTA113ET.
1.
2 Features
s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs.
1.
3 Applications
s General purpose switching and amplification s Inverter and interface circuits s Circuit driver.
1.
4 Quick reference data
Table 1: Symbol VCEO IO R1 R2 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor bias resistor Conditions Min Typ 1 1 Max 50 100 Unit V mA kΩ kΩ
2.
Pinning information
Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector
3
R1
Simplified outline
Symbol
3 1
R2
1 Top view
2
sym007
2
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Philips Semiconductors
PDTC113ET
NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
3.
Ordering information
Table 3: Ordering information Package Name PDTC113ET Description plastic surface mounted package; 3 leads Version SOT23 Type number
4.
Marking
Table 4: Marking Marking code [1] *14 Type number PDTC113ET
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5.
Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb
[1]
Conditions open emitter open base open collector
Min -
Max 50 50 10 +10 −10 100 100 250 +150 150 +150
Unit V V V V V mA mA mW °C °C °C
output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C
[1]
−65 −65
Refer to standard mounting conditions.
6.
Thermal characteristics
Table 6: Symbol Rth(j-a)
[1]
Thermal characteristics Parameter thermal resistance from ...
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