Power LDMOS transistor
Description
BLF6G20LS-140
Power LDMOS transistor
Rev.
01 — 27 February 2009
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Product data sheet
1.
Product profile
1.
1 General description
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 1930 to 1990
VDS (V) 28
PL(AV) (W) 35.
5
Gp (dB) 16.
5
ηD (%) 30
IMD3 (dBc) −37[1]
ACPR (dBc) −40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 mA: N Average output power = 35.
5 W N Power gain = 16.
5 dB (typ) N Efficiency = 30 % N IMD3 = −37 dBc N ACPR = −40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
NXP Semiconductors
BLF6G20LS-140
Power LDMOS transistor
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1.
3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range
2.
Pinning information
Table 2.
Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphical symbol
1
2 3
sym112
[1]
Connected to flange.
3.
Ordering information
Table 3.
Ordering information Package Name BLF6G20LS-140 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number
4.
Limiting values
Table 4.
Limiting values In accordance with the Absolute Maximum Rating Sy...
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