N-Channel MOSFET
Description
2SK3441
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441
DC-DC Converter Applications Relay Drive and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 4.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 80 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics www.
DataSheet4U.
com Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 75 300 125 468 75 12.
5 150 −55 to 150 A W mJ A mJ °C °C Unit V V V
< 1 ms) Pulse (t = (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-97 2-9F1B
Weight: 0.
74 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.
00 Unit °C/W
Circuit Configuration
Notice:
Please use the S1 pin for gate input signal return.
Make sure that the main current flows into the S2 pin.
4
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 113 μH, RG = 25 Ω, IAR = 75 A Note 3: Repetitive rating: p...
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