R-C Thermal Model Parameters
Description
Si7431DP_RC
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R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques.
These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 10.
7022 1.
5396 8.
1730 44.
5852 Ambient 637.
7248 m 18.
3411 m 63.
4993 m 1.
8487 Case 548.
9235 m 66.
0800 m 627.
5846 m 257.
4119 m Case 10.
0502 m 272.
6095 u 29.
5873 m 81.
3733 m Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 69750 Revision: 05-Oct-07
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Si7431DP_RC
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R-C THERMAL MODEL FOR FILTER CONFIGURATION
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R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 1.
1104 10.
0242 17.
6100 36.
2554 Ambient 4.
1294 m 39.
9661 m 437.
8318 m 1.
7301
Case 73.
7712 m 1.
0473 247.
5346 m 131.
3942 m Case 390.
6485 u 6.
5021 m 42.
5444 m 4.
6436 m
Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A
Thermal Capacitance (Joules/°C)
Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton Mc...
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