Silicon N-Channel Power MOSFET
Description
HAT2266H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 9.
2 mΩ typ.
(at VGS = 10 V) • Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5
1 234
4 G
SSS 123
REJ03G1370-0500 Rev.
5.
00
Apr 05, 2006
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C
Tch
Tstg
Ratings 60 ±20 30 120 30 20 34 23 5.
44 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C/W °C °C
Rev.
5.
00 Apr 05, 2006 page 1 of 7
HAT2266H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 60
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.
0
Static drain to source on state resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
35
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4.
Pulse test
Typ — — — — 9.
5 11 70 3600 400 145 0.
5 25 8.
2 9 10 15 50 5.
5 0.
84 40
Max — ±0.
1 1 2.
5 12 16 — — — — — — — — — — — — 1.
10 —
Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns
(Ta = 25°C)
Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS...
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