Silicon N-Channel Power MOSFET
Description
HAT2226R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
8765
1234
4 G
5678 DDDD
SSS 123
REJ03G1466-0100 Rev.
1.
00
Jul 18, 2006
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage Gate to source voltage
VDSS
600
VGSS
±30
Drain current Drain peak current
ID
0.
1
ID
Note1 (pulse)
0.
4
Body-drain diode reverse drain current
IDR
0.
1
Body-drain diode reverse drain peak current
IDR
Note1 (pulse)
0.
4
Channel dissipation
Pch Note2
1.
5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit V V A A A A W °C °C
Rev.
1.
00 Jul 18, 2006 page 1 of 3
HAT2226R
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3.
Pulse test
Symbol V(BR)DSS
IDSS IGSS VGS(off) RDS(on)
Min 600 — — 3.
0 —
Ciss
—
Coss
—
Crss
—
td(on)
—
tr
—
td(off)
—
tf
—
Qg
—
Qgs
—
Qgd
—
VDF
—
trr
—
Typ — — — — 35
25 4 0.
4 34 16 57 320 3.
1 0.
5 2.
3 0.
79 175
Max — 1 ±0.
1 5.
0 52
— — — — — — — — — — 1.
35 —
Unit V µA µA V Ω
(Ta = 25°C)
Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 50 mA, VGS = 10 V Note3
pF VDS = 25 V pF VGS = 0 pF f = 1 MHz
ns ID = 50 mA
ns VGS = 10 V ns RL = 6000 Ω ns Rg = 10 Ω
nC VDD = 480 V
nC VGS = 10 V
nC ID = 100 mA
V
IF =...
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