IGBT
Description
SEMiX151GB12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognized, file no.
E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V.
.
.
+ 15 V
Tj = 25 °C
VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1 RG off = 1
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 3900 A/µs Tj = 150 °C di/dtoff = 2000 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200 232 179 150 450 -20 .
.
.
20
10
-40 .
.
.
175
189 141 150 450 900 -40 .
.
.
175
600 -40 .
.
.
125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max.
Unit
1.
8
2.
05
V
2.
2
2.
4
V
0.
8
0.
9
V
0.
7
0.
8
V
6.
7
7.
7
m
10.
0
10.
7 m
5
5.
8
6.
5
V
2.
0
mA
mA
9.
3
nF
0.
58
nF
0.
51
nF
850
nC
5.
00
204
ns
42
ns
16.
6
mJ
468
ns
91
ns
18.
4
mJ
0.
19 K/W
GB
© by SEMIKRON
Rev.
3 – 03.
07.
2013
1
SEMiX151GB12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GB12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(s...
Similar Datasheet
- SEMIX151GB12E4S IGBT - Semikron International
