PNP Transistor
Description
DISCRETE SEMICONDUCTORS
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DATA SHEET
book, halfpage
M3D088
PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor
Product specification 2003 Dec 12
Philips Semiconductors
www.
DataSheet4U.
com Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETS in specific applications.
APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting.
• Peripheral drivers – Driver in low supply voltage applications (e.
g.
lamps and LEDs) – Inductive load driver (e.
g.
relays, buzzers and motors).
handbook, halfpage
PBSS5130T
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.
−30 −1 −1.
5 220 UNIT V A A mΩ
3 3 1
DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package.
Top view
2 1 2
MAM256
MARKING TYPE NUMBER PBSS5130T Note 1.
* = p : made in Hong Kong * = t : made in Malaysia * = W : made in China.
MARKING CODE(1) *3E Fig.
1 Simplified outline (SOT23) and symbol.
2003 Dec 12
2
Philips Semiconductors
www.
DataSheet4U.
com Product specification
30 V, 1 A PNP low VCEsat (BISS) transistor
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5130T − DESCRIPTION plastic surface mounted package; 3 leads
PBSS5130T
VERSION SOT23
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb ≤ 25 °C note 1 note 2 Tstg Tj Tamb Notes 1.
Device mounted on an FR4 printed-...
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