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BUK92150-55A

NXP Semiconductors

TrenchMOS logic level FET


BUK92150-55A
BUK92150-55A

PDF File BUK92150-55A PDF File


Description
BUK92150-55A TrenchMOS™ logic level FET Rev.
03 — 30 May 2002 M3D300 www.
DataSheet4U.
com Product data 1.
Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK92150-55A in SOT428 (D-PAK).
2.
Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible.
3.
Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) Philips Semiconductors BUK92150-55A w w w logic .
D a level t a S FET h e e TrenchMOS™ t 4 U .
c 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 5 A Tj = 25 °C; VGS = 4.
5 V; ID = 5 A Tj = 25 °C; VGS = 10 V; ID = 5 A Tj = 175 °C; VGS = 5 V; ID = 5 A Typ 120 97 Max 55 11 36 175 140 155 125 280 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ mΩ mΩ 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 11 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp ...



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