MICROWAVE POWER GaAs FET
Description
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-60SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at ...
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