Gallium Arsenide CATV Amplifier Module
Description
Freescale Semiconductor Technical Data
Document Number: MHW10236N Rev.
0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions Applications • CATV Systems Operating in the 40 to 1000 MHz Frequency Range • Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications Description • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module • RoHS Compliant
MHW10236N
1000 MHz 23.
8 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE
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CASE 1302 - 01, STYLE 1
Table 1.
Maximum Ratings
Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value +65 +26 - 20 to +100 - 40 to +100 Unit dBmV Vdc °C °C
Table 2.
ESD Maximum Ratings
Rating Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil.
Std.
1686 Input Value 200 2 Output Value 200 2 Unit V kV
Table 3.
Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic Frequency Range Power Gain Slope Gain Flatness (40 - 870 MHz, Peak - to - Valley) Return Loss — Input (Zo = 75 Ohms) 40 - 500 MHz 501 - 870 MHz 871 - 1000 MHz ORL 40 - 300 MHz 301 - 750 MHz 751 - 870 MHz 871 - 1000 MHz 20 19 16 12 — — — — — — — — 1000 MHz 40 - 1000 MHz Symbol BW Gp S GF IRL 20 18 15 — — — — — — dB Min 40 23 0 — Typ — 23.
8 0.
55 — Max 1000 24.
5 1.
2 0.
8 Unit MHz dB dB dB dB
Return Loss — Output (Zo = 75 Ohms)
© Freescale Semiconductor, Inc.
, 2006.
All rights reserved.
MHW10236N 1
RF Device Data Freescale Semiconductor
Table 3.
Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Characteristic Composite Second Order (Vout = +48 dB...
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