TVS Clamping Arrays
Description
ESDA6V1-5T6
Transil™ arrays for ESD protection
Features
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5 uni-directional Transil diodes Breakdown voltage VBR = 6.
1 V min.
Low leakage current < 200 nA Very small PCB area: 1.
0 mm² 350 µm pitch micro-package Lead-free and RoHS package High ESD protection level High integration Suitable for high density boards Figure 1.
Functional diagram
Micro DFN package 1.
0 x 1.
0-6L
Complies with the following standards
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IEC 61000-4-2 level 4: – 15 kV (air discharge) – 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class 3B – HBM (human body model)
I/O1 1 GND 2 I/O2 3
6 I/O5 5 I/O4 4 I/O3
■
Applications
Where transient overvoltage protection in ESD sensitive equipment is required, such as:
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■ ■ ■ ■ ■
phone handsets and accessories
Computers Printers Communication systems Video equipment Set top boxes
Description
The ESDA6V1-5T6 is monolithic arrays designed to protect up to 5 lines against ESD transients.
The device is ideal for applications where both reduced print circuit board space and high ESD protection level are required.
TM: Transil is a trademark of STMicroelectronics
January 2010
Doc ID 16855 Rev 1
1/12
www.
st.
com 12
Characteristics
ESDA6V1-5T6
1
Characteristics
Table 1.
Symbol VPP PPP Ipp Tj Tstg TL
Absolute maximum ratings (Tamb = 25 °C)
Parameter ESD IEC 61000-4-2, air discharge ESD IEC 61000-4-2, contact discharge Peak pulse power dissipation (8/20 µs)(1) Tj initial = Tamb Value 15 8 35 3 125 -55 + 150 260 Unit kV W A °C °C °C
Repetitive peak pulse current typical value (8/20 µs) Junction temperature Storage temperature range Maximum lead temperature for soldering during 10 s
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2.
Electrical characteristics (definitions)
I IF
Symbol VBR = IRM = VRM =
Parameter Breakdown voltage Leakage current @ VRM Stand-off voltage
VF VCL VBR VRM IRM V
Slope: 1/Rd
IPP
Table 2.
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