SILICON PLANAR TYPE THYRISTOR
Description
SF16GZ51,SF16JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF16GZ51,SF16JZ51
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Isolation Voltage : IT (AV) = 16A : VIsol = 1500V AC Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF16GZ51 SF16JZ51 SF16GZ51 VRSM SF16JZ51 IT(AV) IT(RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VIsol
2
SYMBOL VDRM VRRM
RATING 400
UNIT
V 600 500 V 720 16 25 250 (50Hz) 275 (60Hz) 312 100 5 0.
5 10 −5 2 −40~125 −40~125 1500 A A A A s A / µs W W V V A °C °C V
2
Average On−State Current (Half Sine Waveform) R.
M.
S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Curret (Note) Peak Gate Power Dissipation Average Gate Power Dissipation www.
DataSheet4U.
com Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.
)
2
JEDEC JEITA TOSHIBA Weight: 5.
9g
― ― 13−16A1B
Note :
di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns
1
2001-07-13
SF16GZ51,SF16JZ51
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Holding Current Critical Rate of Rise of Off−State Voltage Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT IH dv / dt Rth (j−c) TEST CONDITION VDRM = VRRM = Rated ITM = 50A VD = 6V, RL = 10Ω VD = 6V, ITM = 500mA VDRM = Rated, Tc = 125°C Exponential Rise Junction to Case MIN ― ― ― ― ― ― ― TYP.
― ― ― ― ― 50 ― MAX 20 1.
5 1.
5 15 50 ― 1.
5 UNIT µA V V mA mA V / µs °C / W
MARKING
NUMBER *1 TYPE SYMBOL SF16GZ51 SF16JZ51 MARK F16GZ51 F16JZ51
*2
Example 8A: January 1998 8B: Februar...
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