Power MOSFET
Description
PD- 95915
IRFP260PbF
Lead-Free
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
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IRFP260PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.
U.
T.
- Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.
W.
Period D=
P.
W.
Period VGS=10V
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D.
U.
T.
ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.
U.
T.
VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.
0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS
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IRFP260PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
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TO-247AC Part Marking Information
N IRFPE30 EXA M PLE: THIS IS A WITH A SSEMBLY LOT CODE 5657 ASSEMBLED O N WW35, 2000 IN THE A SSEM BLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PA RT NUM BER INTERNATIONA L RECTIFIER LOG O A SSEM BLY LOT CO DE
IRFPE30
56 035H 57
DA TE CO DE YEA R 0 = 2000 W EEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St.
, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.
irf.
com for sales contact information.
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