128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
Description
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μPD46128953-X
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
Description
The μPD46128953-X is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS Mobile Specified RAM featuring synchronous burst read and synchronous burst write function.
The μPD46128953-X realizes high performance with the SDR interface, command and data inputs / outputs are synchronized the rising edge of clock.
The μPD46128953-X is fabricated with advanced CMOS technology using one-transistor memory cell.
Features
• 4,194,304 words by 32 bits organization • Low voltage operation: 1.
7 to 2.
0 V (1.
85±0.
15 V) • Operating ambient temperature: TA = −25 to +85 °C • Synchronous burst mode Burst length : 8 double words (Wrap) Burst sequence : Linear burst Maximum clock frequency : 83 / 66 MHz • SDR (Single Data Rate) Architecture One data transfers per one clock cycle All inputs/outputs are synchronized with the positive edge of the clock • Write data mask (DM) for write operation • Output Enable: /OE pin • Chip Enable input: /CE1 pin • Standby Mode input: CE2 pin • Standby Mode 1: Normal standby (Memory cell data hold valid)
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• Standby Mode 2: Density of memory cell data hold is variable
μPD46128953
Clock frequency MHz (MAX.
) -E12X -E15X
Note
Operating supply voltage V 1.
7 to 2.
0
Operating ambient temperature °C −25 to +85 60 55
Supply current
At operating mA (MAX.
)
At standby μA (MAX.
)
83 66
T.
B.
D.
Note Under consideration
The information in this document is subject to change without notice.
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Document No.
M17506EJ1V1DS00 (1st edition) Date Published September 2005 CP (K) Printed in Japan
2005
μPD461289...
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