DatasheetsPDF.com

FLK017WF

Eudyna Devices

Ku Band Power GaAs FET - Eudyna Devices


FLK017WF
FLK017WF

PDF File FLK017WF PDF File



Description
FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.
5dBm(Typ.
) High Gain: G1dB = 7.
5dB(Typ.
) High PAE: ηadd = 26%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 1.
15 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 1.
34 and -0.
05 mA respectively with gate resistance of 3000Ω.
3.
The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) www.
DataSheet4U.
com Item Symbol IDSS gm Vp VGSO P1dB G1dB ηadd NF Gas Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 40mA VDS = 5V, IDS = 3mA IGS = -3µA VDS = 10V, IDS = 0.
6 IDSS (Typ.
), f = 14.
5 GHz VDS = 3V, IDS = 20mA (Typ.
), f = 12 GHz Channel to Case Min.
-1.
0 -5 19.
5 6.
0 - Limit Typ.
Max.
60 30 -2.
0 20.
5 7.
5 26 2.
5 7 65 90 -3.
5 130 Unit mA mS V V dBm dB % dB dB °C/W Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Power-added Efficiency Noise Figure Associated Gain Thermal Resistance CASE STYLE: WF G.
C.
P.
: Gain Compression Point Edition 1.
1 July 1999 1 FLK017WF X, Ku Band Power GaAs FET POWER DERATING CURVE 2 DRAIN CURRENT vs.
DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) Drain Current (mA) 60 VGS =0V -0.
5V 1 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)